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2SC3642NECN/a3000avaiUltrahigh-Definition Display Horizontal Deflection Output Applications


2SC3642 ,Ultrahigh-Definition Display Horizontal Deflection Output ApplicationsOrdering number: EN1626?2803642NPN Triple Diffused Planar Silicon TransistorUltrahigh-Definition Di ..
2SC3644 ,Ultrahigh-Definition Display Horizontal Deflection Output ApplicationsAbsolute Maximum Ratings at Ta =25°C unitCollector-to-Base Voltage V0130 1200 - VCollector-to-Emitt ..
2SC3646 ,NPN Epitaxial Planar Silicon Transistors High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3647 ,NPN Epitaxial Planar Silicon Transistors High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3647T-TD-E , Bipolar Transistor
2SC3649 ,NPN Epitaxial Planar Silicon Transistors High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SK165 ,Si N-channel junction. Wide-band, low-noise amplifier.Electrical Characteristics (Ta = 25 "C)Item Symbol Condition min. typ. max. UnitF V 4 V ttitr, Irss ..
2SK1657 ,N-CHANNEL MOS FET FOR SWITCHING2.9i0.2 1.1 to 1.4 Oto 0.1 . Source . Gate Drain G19 1 2 MARK: Gate(G) N-C ..
2SK1657-T1B ,MOS field effect transistor2.9i0.2 1.1 to 1.4 Oto 0.1 . Source . Gate Drain G19 1 2 MARK: Gate(G) N-C ..
2SK1657-T2B ,MOS field effect transistorELECTRICAL CHARACTERISTICS (Ta = 25 0C) PARAMETER SYMBOL 2SK1657 TEST CON DlTl ONS D ..
2SK1658 ,N-CHANNEL MOS FET FOR SWITCHINGELECTRICAL CHARACTERISTICS (Ta = 25 "C) PARAMETER SYMBOL . . . TEST CONDITIONS Drain Cut-off Cu ..
2SK1663 ,N-CHANNEL SILICON POWER MOS-FETApplications --" j [ ' a _", (ole i we 'tr, "Switching regulators J' em _ W , or, I an I' 5,08 ..


2SC3642

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