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2SC3624A-T1B |2SC3624AT1BNECN/a3600avaiSilicon transistor
2SC3624-T1B |2SC3624T1BNECN/a33000avaiSilicon transistor
2SC3624-T2B |2SC3624T2BNECN/a2980avaiSilicon transistor


2SC3624-T1B ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta = CHARACTERISTIC SYMBOL
2SC3624-T2B ,Silicon transistor‘NSILICONWTRANSISWT0RMS ZSC3624, ZSC3624A AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON E ..
2SC3626 , Silicon NPN Power Transistors
2SC3631 ,Silicon transistorapplications. ' 2. Collector . 3. Emitter _ 4. Collector _ ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C) ..
2SC3631 ,Silicon transistorFEATURES ' i i ' L I ‘osion 0 High Voltage Vceo = 400 V T . . High Speed tf < 0.7 ps . . t . . ..
2SC3631-Z ,NPN SILICON TRIPLE DIFFUSED TRANSISTOR MP-3applications. ' 2. Collector . 3. Emitter _ 4. Collector _ ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C) ..
2SK1623 , Silicon N-Channel MOS FET
2SK1645 ,For C to X-band Local Oscillator and AmplifierAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
2SK1646 ,For C to X-band Local Oscillator and AmplifierAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
2SK165 ,Si N-channel junction. Wide-band, low-noise amplifier.Electrical Characteristics (Ta = 25 "C)Item Symbol Condition min. typ. max. UnitF V 4 V ttitr, Irss ..
2SK1657 ,N-CHANNEL MOS FET FOR SWITCHING2.9i0.2 1.1 to 1.4 Oto 0.1 . Source . Gate Drain G19 1 2 MARK: Gate(G) N-C ..
2SK1657-T1B ,MOS field effect transistor2.9i0.2 1.1 to 1.4 Oto 0.1 . Source . Gate Drain G19 1 2 MARK: Gate(G) N-C ..


2SC3624A-T1B-2SC3624-T1B-2SC3624-T2B

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