| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC3606/MH |
TOSHIBA|TOSHIBA |
N/a |
3000 |
 |
|
2SC3607 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.1dB, |S | = 9.5dB (f = 1 GHz) 21 ..
2SC3611 ,Power DevicePower Transistors2SC3611Silicon NPN epitaxial planar typeFor video amplifierUnit: mm+0.58.0–0.13.2± ..
2SC3615 ,NPN SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 °C)
SYMBOL CHARACTERlSTlC MIN. TYP. MAX. UNIT
DC Current Ga ..
2SC3616 ,NPN SILICON TRANSISTORapplications
requiring High DC Current Gain.
This is suitable for all kind of driving, instead ..
2SC3617 ,NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 oc)'
CHARACTERISTIC SYMBOL TYP. MAX. UNIT TEST CONDITIONS
..
2SK1586-T1 ,N-channel MOS FETELECTRICAL CHARACTERISTICS (Ta = 25 0C)
2SKI586
PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CON ..
2SK1587 ,N-CHANNEL MOS FET FOR SWITCHINGELECTRICAL CHARACTERISTICS (Ta = 25 oC)
PARAMETER SYMBOL . . . TEST CONDITIONS
Drain Cut-off ..
2SK1587-T1 ,N-channel MOS FETELECTRICAL CHARACTERISTICS (Ta = 25 oC)
PARAMETER SYMBOL . . . TEST CONDITIONS
Drain Cut-off ..
