2SC3585-T2B ,For amplify microwave and low noise.features excellent power gain with very low-noise figures. The2.8±0.22SC3585 employs direct nitrid ..
2SC3585-T2B ,For amplify microwave and low noise.DATA SHEETDATA SHEETSILICON TRANSISTOR2SC3585MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITA ..
2SC3588 ,NPN SILICON TRIPLE DIFFUSED TRANSISTOR MP-3applications.
. Base .
. Collector
. Emitter
ABSOLUTE MAXIMUM RATINGS (Ta IT, 25 °C) , Coll ..
2SC3588.. ,NPN SILICON TRIPLE DIFFUSED TRANSISTOR MP-3FEATURES
q High Voltage Vcso = 400 V
. 0 Complement to 2SA1400-Z
QUALITY GRADE
Standard
..
2SC3588-Z ,NPN SILICON TRIPLE DIFFUSED TRANSISTOR MP-3ELECTRICAL CHARACTERISTICS (Ta IT, 25 °C)
T _CHARACrERlSTlt? ' ' SYMBOL,
Collector Cutoff Cur ..
2SC3591 ,High-Definition CRT Display Horizontal Deflection Output ApplicationsAbsolute Maximum Ratings at Ta =25°CunitCollector-to-Base Voltage VCBO 400 VCollector-to-Ernie- Vol ..
2SK1580 ,N-channel MOS FETDATA SHEETMOS FIELD EFFECT TRANSISTOR2SK1580N-CHANNEL MOS FETFOR SWITCHINGDESCRIPTION The 2SK1580 ..
2SK1580-T1 ,N-channel MOS FETELECTRICAL CHARACTERISTICS (TA = 25°C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITZer ..
2SK1580-T2 ,N-channel MOS FETFEATURESG• Directly driven by ICs having a 3 V power supply.DS• Not necessary to consider driving ..
2SK1581 ,N-channel MOS FETFEATURES
0 Directly driven by |Cs having a 3 V power supply.
2'0436'3
0 Not necessary to c ..
2SK1581-T1B ,N-channel MOS FETDATA SHEET
i NEC/ MOS FIELD EFFECT TRANSISTOR
ZSK1 581
N-CHANNEL MOS FET
FOR SWITCHING
T ..
2SK1582 ,N-channel MOS FETELECTRICAL CHARACTERISTICS (TA = 25 0C)
F——‘
PARAMETER SYMBOL MIN. TYP. MAX. TEST CONDITIONS
..
2SC3585T1B-2SC3585-T1B-2SC3585-T2B
