| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC3391 |
HIT |
N/a |
3999 |
 |
Silicon NPN Epitaxial Planar |
| 2SC3391 |
HITACHI |
N/a |
25000 |
|
Silicon NPN Epitaxial Planar |
2SC3391B101TZ HITACHI
2SC3391B201TZ HITACHI
2SC3391 , Silicon NPN Epitaxial Planar
2SC3392 ,NPN Epitaxial Planar Silicon Transistors High-Speed Switching ApplicationsFeatures Package Dimensions · Adoption of FBET process.unit:mm · High breakdown voltage : V =(–)50V ..
2SC3395 ,PNP/NPN Epitaxial Planar Silicon TransistorsSANYO SEMICONDUCTOR CORP BEE D " 7937075 0007332 5 "28A1341, _ T-37-I328C3395 Q -r-3S -/ /PNP/NPN E ..
2SC3395 ,PNP/NPN Epitaxial Planar Silicon TransistorsFeatures. Builtin bias resistor iRe-47ki2. R2=47k§2).. SmaII-sized package (GP).i ): 2SA1341
2SC3396 ,SILICON PNP/NPN EPITAXIAL PLANAR TRANSISTOR FOR SWITCHING APPLICATIONSNo. 12842SAI 342/2503396SILICON PNP/NPN EPITAXIAL PLANAR TRANSISTOR. FOR SWITCHING APPLICATIONS(WIT ..
2SK1265 ,Silicon N-channel Power F-MOS FETMaintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.pl ..
2SK1266 ,Silicon N-channel Power F-MOS FETAbsolute Maximum Ratings (Tc=25°C) upItem Symbol Value Unit 1 2 3 1 G t- 2 a eDrain-source voltage ..
2SK1266 ,Silicon N-channel Power F-MOS FETFeatures I Package Dimensionsq Low ON resistance Rns (on) : R135 (on) 1:0.080 (typ.) Unit: mmq High ..
