2SC3352A ,Power TransistorFeatures , 3 57m“.0 High speed switching0 High collector-base voltage (cho)High Breakdown Voltage, ..
2SC3352A ,Power TransistorAbsolute Maximum Ratings (Tc=25°C) . 3 "ll“ 15max0'5m“__—._—.— '5Item Symbol Value Unit 5, E 7- h 0 ..
2SC3354 ,Small-signal deviceAbsolute Maximum Ratings T = 25°Ca+0.20Parameter Symbol Rating Unit0.45–0.10+0.200.45–0.10(2.5) (2 ..
2SC3355 , NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
2SC3355 , NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
2SC3355 , NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
2SK1101. ,N-CHANNEL SILICON POWER MOS-FET213K1101-01MR
FUJI POWER MOS-FET
N-CHANNEL SILICON POWER MOS-FET
I
2SK1101-01MR , N-CHANNEL SILICON POWER MOS-FET
2SK1102 ,N-CHANNEL SILICON POWER MOS-FETFeatures
OHigh speed switching
q Low on-resistance
0N0 secondary breakdown
OLow driving p ..
2SK1102 ,N-CHANNEL SILICON POWER MOS-FET_SK1102-01MR
FUJI
POWER MOS-FET
N-CF ANNEL SILICON POWE
R MOS-FET
I
2SK1109 ,N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECMFEATURES• Compact package1. Source• High forward transfer admittance2. Drain3. Gate1000 µ S TYP. (I ..
2SK1117 ,2SK1117
2SC3352A
