| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC3345#T |
|
N/a |
12 |
 |
|
2SC3346 ,Silicon NPN Power Transistors TO-220C packageSILICON NPN EPITAXIAL TYPE (PCT PROCESS)Unit in mmHIGH CURRENT SWITCHING
2SC3352A ,Power TransistorFeatures , 3 57m“.0 High speed switching0 High collector-base voltage (cho)High Breakdown Voltage, ..
2SC3352A ,Power TransistorAbsolute Maximum Ratings (Tc=25°C) . 3 "ll“ 15max0'5m“__—._—.— '5Item Symbol Value Unit 5, E 7- h 0 ..
2SC3354 ,Small-signal deviceAbsolute Maximum Ratings T = 25°Ca+0.20Parameter Symbol Rating Unit0.45–0.10+0.200.45–0.10(2.5) (2 ..
2SC3355 , NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
2SK1098M ,N-channel MOS-FETFeatures > Outline Drawing----->
2SK1098M ,N-channel MOS-FETApplications---> Maximum Ratings and Characteristics > Equivalent Circuit-Absolute Maximum Ratings ..
2SK1101 ,N-CHANNEL SILICON POWER MOS-FET213K1101-01MR
FUJI POWER MOS-FET
N-CHANNEL SILICON POWER MOS-FET
I
