2SC3333 ,Transistor Silicon NPN Triple Diffused Type (PCT process) High Voltage Switching Applications Color TV Chroma Output ApplicationsApplications High voltage: V = 250 V CEO Low C : 1.8 pF (max) re Complementary to 2SA1320 ..
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2SC3336 , Silicon NPN Power Transistors
2SC3345 ,Silicon NPN Power Transistors TO-220 packageFEATURES:. Low Collector Saturation VoitageN'i. VCE(sat)= =0, 4V(Max. ) (at Ic=6A) é. High Speed Sw ..
2SC3346 ,Silicon NPN Power Transistors TO-220C packageSILICON NPN EPITAXIAL TYPE (PCT PROCESS)Unit in mmHIGH CURRENT SWITCHING
2SC3352A ,Power TransistorFeatures , 3 57m“.0 High speed switching0 High collector-base voltage (cho)High Breakdown Voltage, ..
2SK1087MR ,N-CHANNEL SILICON POWER MOSFETgSK1087-MR
FUJI POWER MOS-FET
N-C 4ANNEL SILICON POWER MOS-FET
I F eatures
. High curre ..
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2SK1096MR ,N-CHANNEL SILICON POWER MOSFET12S_N1_09ti-M2t
FUJI POWER MOS-FET
N-CHANNEL SILICON POWER MOS-FET
I
2SK1098M ,N-channel MOS-FETFeatures > Outline Drawing----->
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FUJI POWER MOS-FET
N-CHANNEL SILICON POWER MOS-FET
I
2SC3333
Transistor Silicon NPN Triple Diffused Type (PCT process) High Voltage Switching Applications Color TV Chroma Output Applications
2SC3333 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
2SC3333 High Voltage Switching Applications
Color TV Chroma Output Applications High voltage: VCEO = 250 V Low Cre: 1.8 pF (max) Complementary to 2SA1320
Maximum Ratings (Ta ��� � 25°C)
Electrical Characteristics (Ta ��� � 25°C) Cre VCB � 30 V, IE � 0, f � 1 MHz
Unit: mm
Weight: 0.21 g (typ.)
