2SC3303 ,TO-251 Plastic-Encapsulate Biploar TransistorsApplications Unit: mmDC-DC Converter
2SC3306 ,POWER TRANSISTORS(10A,400V,100W)APPLICATIONS.1.04.5Excellent Switching Times: tr=1.0,us (Maxi tf=i.b,us (Max.) (1025A)High Collecto ..
2SC3307 ,Silicon NPN Power Transistors TO-3PL packageAPPLICATIONS 20.5MAX. 33:02HIGH SPEED DC-DC CONVERTER
2SC3309 ,Silicon NPN Power Transistors TO-220Fa packageFEATURES:. Excellent, Switching Timestr= I. osaiax. I, tf= l. O#s(Max. ) at Ic=0.8A. High Collector ..
2SC3310 ,Silicon NPN Power Transistors TO-220Fa packageFEATURES:. Excellent Switching Timest tr=1. Ous(Max. ), tf=1. 0msOfax. ) at Ic=4A. High 'Collector ..
2SC3311 ,TransistorMaintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.pl ..
2SK1018 ,POWER MOSFETFuji power MUSFET Specification
28K1018
1. Scope
I "2, This specifies Fuji power MOSFET 2 S ..
2SK1020 ,N-CHANNEL SILICON POWER MOSFETFeatures IOutline Drawings
. High speed switching
q Low on-resistance
0N0 secondary breakdow ..
2SK1033 ,Silicon N-channel Power F-MOS FETMaintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.pl ..
2SK1034 ,Silicon N-channel Power F-MOS FETMaintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.pl ..
2SK1035 ,SILICON N CHANNEL POWER F MOSFET
2SK1036 ,Silicon N-Channel Power F-MOSElectrical Characteristics (Tc = 25˚C)Parameter Condition Min Typ Max UnitSymbol=200V , V = 0Drain- ..
2SC3303
TO-251 Plastic-Encapsulate Biploar Transistors
2SC3303 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3303 High Current Switching Applications
DC-DC Converter Applications Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) High speed switching time: tstg = 1.0 µs (typ.)
Maximum Ratings (Ta = 25°C) Industrial Applications
Unit: mm
Weight: 0.36 g (typ.)
Weight: 0.36 g (typ.)
