2SC3266 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsApplications Low saturation voltage: V = 0.5 V (max) (I = 2 A) CE (sat) C Complementary to ..
2SC3267 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsApplications Low saturation voltage: V = 0.5 V (max) @I = 2 A CE (sat) C Complementary to 2 ..
2SC3268 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm 2 NF = 1.7dB, |S | = 15.0dB (f = 500 MHz) 21e2 NF = 2dB, |S | = 9.5dB ( ..
2SC3269 ,1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINEAPPLICATIONSTThrh DC Current Gain and Wynnnnnt hum Tinnnritv5.1 MAX.--...,v vv-:hFE(1)=140~600 (VCE ..
2SC3271F , Chroma Amplifier Transistor
2SC3271F , Chroma Amplifier Transistor
2SJ669 ,Power MOSFET (P-ch single)
2SJ76 , Silicon P Channel MOS FET
2SK0665 ,Small-signal deviceapplications intended.(4) The products and product specifications described in this material are su ..
2SK1006 ,N-CHANNEL SILICON POWER MOSFETApplications ' 3 Source
OEwitching regulators 1
" PS "'-"(-oe--l-,-?Ae'-0?
. DC-DC converters JE ..
2SK1006-01MR ,N-CHANNEL SILICON POWER MOSFETFeatures
FUJI POWER MOS-FET
F-II S
ERIES
IOutline Drawings
" 10x05
OHigh speed swit ..
2SK1008-01 ,N-CHANNEL SILICON POWER MOSFETApplications
q Switching regulators
q JPS
o DC-DC converters
0 General purpose power amplif ..
2SC3266
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications
2SC3266 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3266 Power Amplifier Applications
Power Switching Applications Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A) Complementary to 2SA1296
Maximum Ratings (Ta ��� � 25°C)
Electrical Characteristics (Ta ��� � 25°C)
Note: hFE (1) classification Y: 120~240, GR: 200~400, BL: 350~700
Unit: mm
Weight: 0.21 g (typ.)
