Partno |
Mfg |
Dc |
Qty |
Available | Descript |
2SC310 |
MITSUBISHI |
N/a |
4 |
|
|
2SC310 |
NEC|NEC |
N/a |
21 |
|
|
2SC3110 ,Si NPN Epitaxial PlanarAbsolute Maximum Ratings (Ta=25°C)Item Symbol Value Unit2le 77 .-s'-ztitrdE cho 15 Vc::jpf.cr.:iss, ..
2SC3112 ,Transistor Silicon NPN Epitaxial Type (PCT process) For Audio Amplifier and Switching ApplicationsApplications Unit: mm High DC current gain h = 600~3600 : FE High breakdown voltage: V = 50 ..
2SC3113 ,Transistor Silicon NPN Epitaxial Type For Audio Amplifier and Switching ApplicationsApplications Unit: mm High DC current gain h = 600~3600 : FE High breakdown voltage: V = 50 ..
2SC3114 ,NPN Epitaxial Planar Silicon Transistors High-Vebo, AF Amp ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3114-S , TO-92 Plastic Package Transistors (NPN)
2SJ517YYTL-E , Silicon P Channel MOS FET
2SJ518 , Silicon P Channel MOS FET High Speed Power Switching
2SJ518 , Silicon P Channel MOS FET High Speed Power Switching