| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC3052/LF |
MITSUMI |
N/a |
2800 |
 |
|
2SC3063 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC3064 ,NPN Epitaxial Planar Silicon CompositeTransistorAbsolute Maximum Ratings at Ta=25°C _ unitCollector to Base Voltage Ircrso 55 IrCellector to Emitte ..
2SC3067 ,NPN Epitaxial Planar Silicon Transistor DIFFERENTIAL AMP APPLICATIONSFeatures. Excellent in thermal equilibrium and suiteddifferential amp.. Low noise.. Matched pair ca ..
2SC3068 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3069 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SJ456 ,Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
2SJ460 ,P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHINGFEATURES
0 Can be driven by a 2.5 V power source.
0 Not necessary to consider driving current b ..
2SJ461 ,P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHINGFEATURES
0 Can be driven by a 2.5 V power source.
0 Not necessary to consider driving current b ..
