| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC287A |
NEC|NEC |
N/a |
14000 |
 |
|
2SC2881 ,Transistor Silicon NPN Epitaxial Type (PCT process) Voltage Amplifier Applications Power Amplifier ApplicationsApplications High voltage: V = 120 V CEO High transition frequency: f = 120 MHz (typ.) T ..
2SC2881 ,Transistor Silicon NPN Epitaxial Type (PCT process) Voltage Amplifier Applications Power Amplifier Applications2SC2881 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2881 Voltage Amplifier
2SC2882 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Voltage Amplifier ApplicationsApplications Suitable for driver of 30 to 35 watts audio amplifier Small flat package P ..
2SC2883 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONSApplications Unit: mm Suitable for output stage of 3 watts amplifier Small flat package ..
2SC2884 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONSApplications Unit: mm High DC current gain: h = 100 to 320 FE Suitable for output stage of ..
2SJ329 ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (Ta TI' 25 °C)
CHARACTERISTIC SYMBOL “-
Drain to Source On-state Res ..
2SJ330 ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (Ta = 25 °C)
_—m
__m- -
-2. 0 V
---
_r---r-ij".-iy---r'
Vas ..
2SJ331 ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (Ta = 25 °C)
----—m-
-1.5 . V
Gate to Source Cutoff Voltage Vos = ..
