Partno |
Mfg |
Dc |
Qty |
Available | Descript |
2SC2735JTR |
RENESAS |
N/a |
45000 |
|
|
2SC2735JTR |
HITACHI |
N/a |
2780 |
|
|
2SC2735JTR |
HIT |
N/a |
7765 |
|
|
2SC2736 , Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V
2SC2740 , Si NPN Triple Diffused Junction Mesa
2SC2749 , Silicon NPN Power Transistors
2SC2750 , High Speed High Current Switching Industrial Use
2SC2752 ,NPN SILICON POWER TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 oC)
SYMBOL
hFE1'
ton
tstg
tf
VECO(sus)
VCEX(su ..
2SJ206 ,P-CHANNEL MOS FET FOR SWITCHINGELECTRICAL CHARACTERISTICS (Ta = 25 °C)
PARAMETER SYMBOL . . . TEST CONDITIONS
Drain Cut-off ..
2SJ206-T1 ,P-channel MOS FETELECTRICAL CHARACTERISTICS (Ta = 25 °C)
PARAMETER SYMBOL . . . TEST CONDITIONS
Drain Cut-off ..
2SJ207 ,P-CHANNEL MOS FET FOR SWITCHINGFEATURES
V“ H
O
f, O Directly driven by le having a 3 V power supply.
rt,, 0 Not necessary to ..