| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC2719-T-A |
TOSHIBA|TOSHIBA |
N/a |
1840 |
 |
|
2SC2721 ,Silicon transistorDATA SHEETSILICON TRANSISTOR2SC2721NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-FREQUENCY AMPLIF ..
2SC2721 ,Silicon transistorDATA SHEETSILICON TRANSISTOR2SC2721NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-FREQUENCY AMPLIF ..
2SC2735JTL-E , Silicon NPN Epitaxial
2SC2736 , Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V
2SC2740 , Si NPN Triple Diffused Junction Mesa
2SJ190 ,Very High-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25"C unitDrain to Source Voltage VDSS - 60 VGate to Source Voltage ..
2SJ191 ,Very High-Speed Switching ApplicationsOrdering number: EN 3764A2SJ191P-Channel MOS Silicon FETVery High-Speed Switching Applications
2SJ192 ,Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions · Low ON resistance.unit:mm · Ultrahigh-speed switching.2083B · Low-vol ..
