Partno |
Mfg |
Dc |
Qty |
Available | Descript |
2SC2714-Y/Q |
TOSHIBA|TOSHIBA |
N/a |
30000 |
|
|
2SC2715 ,Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier ApplicationsApplications Unit: mm High power gain: Gpe = 2dB (typ.) (f = 10.7 MHz) Recommended for FM I ..
2SC2715 ,Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications2SC2715 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2715 High Frequen ..
2SC2721 ,Silicon transistorDATA SHEETSILICON TRANSISTOR2SC2721NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-FREQUENCY AMPLIF ..
2SC2721 ,Silicon transistorDATA SHEETSILICON TRANSISTOR2SC2721NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-FREQUENCY AMPLIF ..
2SC2735JTL-E , Silicon NPN Epitaxial
2SJ185 ,P-CHANNEL MOS FET FOR HIGH SPEED SWITCHINGapplications.
1.1 to 1.4
1. Source
2. Gate
3. Drain
MARK :H12
Source(S)
(Diode in ..
2SJ187 ,Very High-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta=25°C unitDrain to Source Voltage Vnss - 30 VGate to Source Voltage K ..
2SJ188 ,Very High-Speed Switching ApplicationsFeatures. Low ON resistance. Very high-speed switching. Low-voltage driveDrain to Source VoltageGat ..