| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC2714-O/QO |
TOSHIBA|TOSHIBA |
N/a |
5940 |
 |
|
2SC2715 ,Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier ApplicationsApplications Unit: mm High power gain: Gpe = 2dB (typ.) (f = 10.7 MHz) Recommended for FM I ..
2SC2715 ,Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications2SC2715 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2715 High Frequen ..
2SC2721 ,Silicon transistorDATA SHEETSILICON TRANSISTOR2SC2721NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-FREQUENCY AMPLIF ..
2SC2721 ,Silicon transistorDATA SHEETSILICON TRANSISTOR2SC2721NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-FREQUENCY AMPLIF ..
2SC2735JTL-E , Silicon NPN Epitaxial
2SJ178 ,P-CHANNEL MOS FET FOR HIGH SPEED SWITCHINGFEATURES
. Low ON-state resistance
RDSM = 1.5 n MAX. at VGS = --4 v, ID 'LT: -0.5 A
RDSM = 1 ..
2SJ179 ,P-CHANNEL MOS FET FOR HIGH SPEED SWITCHINGFEATURES
q Directly driven by le having a 5 V power supply.
0 Has low on-state resistance
RDS( ..
2SJ185 ,P-CHANNEL MOS FET FOR HIGH SPEED SWITCHINGapplications.
1.1 to 1.4
1. Source
2. Gate
3. Drain
MARK :H12
Source(S)
(Diode in ..
