Partno |
Mfg |
Dc |
Qty |
Available | Descript |
2SC2630#T |
|
N/a |
15 |
|
|
2SC2631 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SC2632 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SC2634 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC2641 ,TRANSISTOR (UHF BAND POWER AMPLIFIER APPLICATIONS)2SC2641TOSHIBA TRANSISTOR SILICON NPN EPlTAXIAL PLANAR T7QC7641'tiN...--UHF BAND POWER AMPLIFIER
2SC2641 ,TRANSISTOR (UHF BAND POWER AMPLIFIER APPLICATIONS)APPLICATIONS Unit in mmOutput Power : P0=6W(Min.)(f-- 470MHz, VCC = 12.6V, Pi = 1W)MAXIMUM RATINGS ..
2SD999-T2 ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta=25 oC)
2SH14 , Silicon N-Channel IGBT
2SH20 , Silicon N-Channel IGBT