2SC2258 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitEmitter-base ..
2SC2258 ,Power DeviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating UnitCollector-base voltage (Emitter open ..
2SC2267 , SILICON NPN TRIPLE DIFFUSED HIGH VOLTAGE SWITCHING
2SC2270 ,Silicon NPN Power Transistors TO-126 package-..-_. .uu.._._n‘ ‘u-uu.u_.._.v- .w.SILICON NPN EPITAXIAL TYPE (PCT PROCESS)STROBO FLASH
2SC2271 ,CHROMA OUTPUT, HORIZONTAL DEFLECTION DRIVER APPLICATIONSSANYO SEMICONDUCTOR CORPDefle493E. Small-sized color TV chroma use and Bdriver use.Absolute Maximum ..
2SC2271 ,CHROMA OUTPUT, HORIZONTAL DEFLECTION DRIVER APPLICATIONSSANYO SEMICONDUCTOR CORPDefle493E. Small-sized color TV chroma use and Bdriver use.Absolute Maximum ..
2SD596L ,Silicon transistorELECTRICAL CHARACTERISTICS (TA=25 ''C)
T CHARACTER'ISTIC _ ' . SYMBOL _ . . , _ TEST CONDITIONS
..
2SD596-T1B ,Silicon transistorFEATURES
0 .Micro package.
0 High DC current gain. hFE ." 200 TYP. (Veg = 1.0 V, lc = 100 mA)
. ..
2SD596-T2B ,Silicon transistorapplications.
I 1ti!.r1-1iils' _
2SD600 ,NPN Epitaxial Planar Silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier ApplicationsFeatures Package Dimensions · High breakdown voltage V 100/120V, HighCEO unit:mmcurrent 1A.2009B · ..
2SD600 ,NPN Epitaxial Planar Silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymboC0 ondition2K SB631, D602t SB631K, D600 Uni ..
2SD600K ,NPN Epitaxial Planar Silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymboC0 ondition2K SB631, D602t SB631K, D600 Uni ..
2SC2258
