IC Phoenix
 
Home ›  2213 > 2SC2235,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER, DRIVER STAGE AMPLIFIER APPLICATIONS
2SC2235 Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
2SC2235TOSN/a4564avaiTRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER, DRIVER STAGE AMPLIFIER APPLICATIONS


2SC2235 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER, DRIVER STAGE AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITomectorcut-ofrcurren ..
2SC2236 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITomectorcut-ofrcurren ..
2SC2238 , SILICON NPN EPITAXIAL TRANSISTOR (PCT PROCESS)
2SC2238B , SILICON NPN EPITAXIAL TRANSISTOR (PCT PROCESS)
2SC2240 ,Transistor Silicon NPN Epitaxial Type (PCT process) Low Noise Audio Amplifier Applicationsapplications. This device is designed to lower noise figure in the region of low signal source impe ..
2SC2240-GR , Low Noise Audio Amplifier Applications
2SD569 , isc Silicon NPN Power Transistor
2SD5702 , Silicon NPN Power Transistors
2SD5702 , Silicon NPN Power Transistors
2SD5703 , isc Silicon NPN Power Transistor
2SD571 ,NPN SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 °C) SYMBOL CHARACTERISTIC DC Current Gain DC Current Gain ..
2SD592 ,Silicon NPN epitaxial planer type(For low-frequency output amplification)Absolute Maximum Ratings (Ta=25˚C)nParameter Symbol Ratings Unit2SD592Collector to 30V VCBO+0.2 +0 ..


2SC2235
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER, DRIVER STAGE AMPLIFIER APPLICATIONS
TOSHIBA
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
2SC2235
AUDIO POWER AMPLIFIER APPLICATIONS
2SC2235
Unit in mm
DRIVER STAGE AMPLIFIER APPLICATIONS 5.IMAX.
0 Complementary to 2SA965. g
MAXIMUM RATINGS (Ta = 25°C) hi ..
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 120 V 'i'
Collector-Emitter Voltage VCEO 120 V ' s-),':', Q
m + n3: _
Emitter-Base Voltage VEBO 5 V _,'-,'-.
1. EMITTER
Collector Current IC 800 mA 2. COLLECTOR
Emitter Current IE - 800 mA 3. BASE
Collector Power Dissipation PC 900 mW JEDEC TO-92MOD
Junction Temperature Tj 150 "C JEITA -
Storage Temperature Range Tstg -55--150 T TOSHIBA 2-5J1A
Weight : 0.36g (Typ.)
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 120V, IE = 0 - - 100 nA
Emitter Cut-off Current IEBO VEB = 5V, IC = 0 - - 100 nA
Collector-Emi;
Breakdown Voltage V(BR)CEO IC - lOmA, 1B - 0 120 - - V
Emitter-Base
Breakdown Voltage V(BR)EB0 IE - lmA, IO - O 5 - - V
DC Current Gain hFE (Note) VCE = 5V, IC = 100mA 80 - 240
Collector-Emi;
Saturation Voltage VCE(sat) IC - 500mA, 1B - 50mA - - 1.0 V
Base-Emitter Voltage VBE VCE = 5V, IC = 500mA - - 1.0 V
Transition Frequency fT VCE = 5V, IC = 100mA - 120 - MHz
Collector Output Capacitance Cob VCB = 10V, IE = 0, f = 1MHz - - 30 pF
(Note) .'
hFE Classification
o .' 80--160, Y .' 120--240
TOSHIBA 2SC2235
IC - VCE hFE - IC
1000 1000
COMMON COMMON
A EMITTER EMITTER
li Ta=25°C 500
v 800 E VCE=5V
J? 300
E 600 E
n: g 100
td 400 f,
o D 50
m Q 30
e, 200 ©
o 2 4 6 8 10 12 14 3 10 30 100 300 1000
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT 1C (mA)
VCE(sat) - IC IC - VBE
COMMON COMMON
g EMITTER g EMITTER - -
ti, Ic/IB=10 v VCE=5V
av J? 600 I I
g 'il' Ta=100°C E
b': E M / I I
E y 25 E 400 Ta = 100°C
Eu: ie / 25
ac) M -25
gm -25 o
UP 1:: 200
m> :d I
0.01 0
3 10 30 100 300 1000 0 0.2 0.4 0.6 0.8 1.0 1.2
COLLECTOR-CURRENT IC (mA) BASE-EMITTER VOLTAGE VBE (V)
SAFE OPERATING AREA PC - Ta
3000 I I I I 2 1000
1C MAX.(PULSED)y.k I I I I g
E 1000 IC "yr(cot'nNvous) ‘t, _ Ims)k. k?
V 500 “L i _ - 10msyd. 800
O _ I , I I I a
n. 300 Toc \ \ I I l 2
- 's , 1'100msX - t;
F OPERATION _ Ni
2 100 _ a 600
M Ill', i i l
td Illr I I I "s, a
E 50 )..k. SINGLE \ r:
'd 30 NONREPETITIVE E 400
g PULSE Ta=25°C 'N, t
8 10 CURVE MUST BE t
j 5 DERATED LINEARLY E 200
8 3 WITH INCREASE IN ii)
TEMPERATURE j
0.5 1 3 5 10 30 50 100 300500 1000 O 0o 20 40 60 80 100 120 140 160
COLLECTOR-EMITTER VOLTAGE VCE (V) AMBIENT TEMPERATURE Ta (°C)
2 2001-11-05
TOSHIBA 2SC2235
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-11-05
:
www.loq.com
.
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED