| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC1947 |
MITSUBISHI |
N/a |
20 |
 |
NPN EPITAXIAL PLANAR TYPE(for industrial use RF power amplifiers on VHF band Mobile radio applications) |
| 2SC1947 |
MIT |
N/a |
49 |
|
NPN EPITAXIAL PLANAR TYPE(for industrial use RF power amplifiers on VHF band Mobile radio applications) |
2SC1947-01 MIT
2SC1949 NEC
2SC1954 Fujitsu
2SC1954 FUJI
2SC1957 NEC
2SC1947 , NPN EPITAXIAL PLANAR TYPE(for industrial use RF power amplifiers on VHF band Mobile radio applications)
2SC1959 ,Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applicationsapplications. Complementary to 2SA562TM. Maximum Ratings (Ta 25°C)Characteristics Symbol ..
2SC1959-Y , Power Silicon NPN Transistor
2SC1969 , NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on HF band Mobile radio applications)
2SC1969 , NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on HF band Mobile radio applications)
2SD2586# ,Silicon NPN Power Transistors TO-3P(H)IS package2SD2586 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2586 HORIZONTAL DEFLECTION O ..
2SD2599 ,Silicon NPN Power Transistors TO-3P(H)IS package2SD2599 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2599 HORIZONTAL DEFLECTION O ..
2SD2599 ,Silicon NPN Power Transistors TO-3P(H)IS package2SD2599 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2599 HORIZONTAL DEFLECTION O ..
