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2SC1940N/a40avaiNPN SILICON TRANSISTOR
2SC1940NECN/a700avaiNPN SILICON TRANSISTOR


2SC1940 ,NPN SILICON TRANSISTORFEATURES The 28C1940 is designed for use in driver stages of audio frequency amplifiers. I ..
2SC1940 ,NPN SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 °C) SYMBOL CHARACTERISTIC hFE1 hFE2 DC Current Gai ..
2SC1941 ,NPN SILICON TRANSISTORFEATURES . High total power dissipation and high breakdown voltage: (0.729353) (01037) 1.0 IN at 2 ..
2SC1942 , HIGH VOLTAGE POWER SWITCHING TV HORIZONTAL DEFLECTION OUTPUT
2SC1944 , NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on HF band Mobile radio applications)
2SC1944 , NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on HF band Mobile radio applications)
2SD2578 ,NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SD2579 ,NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SD2581 ,NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output ApplicationsFeatures Package Dimensions · High speed.unit:mm · High breakdown voltage (V =1500V).CBO2039D · Hig ..
2SD2581 ,NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SD2583 ,AUDIO FREQUENCY AMPLIFIER, SWITCHING NOPN SILICON EPITAXIAL TRANSISTORSFEATURESPACKAGE DIMENSIONS• Low VCE(sat)in millimeters (inches)VCE(sat) = 0.15 V Max (@lC/lB = 1.0 ..
2SD2586 ,Silicon NPN Power Transistors TO-3P(H)IS package2SD2586 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2586 HORIZONTAL DEFLECTION O ..


2SC1940

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