| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC1841E/F |
NEC|NEC |
N/a |
64945 |
 |
|
2SC1842 ,NPN SILICON TRANSISTORFEATURES . High hFE. hFE '. 600 TYP. (V¢E=6.O V, Ic=1.0 mA) (Oggxfzx)
. Low Noise Voltage. NV : ..
2SC1844 ,NPN SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta=25 °C)
NPN SILICON TRANSISTOR
2SC1 844
PACKAGE DIMENSIONS
..
2SC1845 ,NPN SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta=25 0C)
r
SYMBOL
hFE1
hFE2
Fr
Cob
NV
ICBO
Ian
VBE ..
2SC1890 , Silicon NPN Epitaxial
2SC1890 , Silicon NPN Epitaxial
2SD2459 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SD2461 ,Transistor Silicon NPN Triple Diffused Type Power Amplifier ApplicationsApplications Unit: mm High DC current gain: h = 800 to 3200 (V = 5 V, I = 0.1 A) FE (1) CE C ..
2SD2474 ,Silicon PNP epitaxial planer type(For low-frequency amplification)Absolute Maximum Ratings (Ta=25˚C)n 3.0– 0.15321Parameter Symbol Ratings UnitCollector to base vol ..
