2SC1841 ,NPN SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta=25 °C)
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SYMBOL CHARACTERISTIC MIN. TYP. MAX. UNIT TEST CONDITIONS ..
2SC1842 ,NPN SILICON TRANSISTORFEATURES . High hFE. hFE '. 600 TYP. (V¢E=6.O V, Ic=1.0 mA) (Oggxfzx)
. Low Noise Voltage. NV : ..
2SC1844 ,NPN SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta=25 °C)
NPN SILICON TRANSISTOR
2SC1 844
PACKAGE DIMENSIONS
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2SC1845 ,NPN SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta=25 0C)
r
SYMBOL
hFE1
hFE2
Fr
Cob
NV
ICBO
Ian
VBE ..
2SC1890 , Silicon NPN Epitaxial
2SC1890 , Silicon NPN Epitaxial
2SD2453 ,Power DeviceElectrical Characteristics T = 25°CaParameter Symbol Conditions Min Typ Max UnitCollector-emitter ..
2SD2454 , Silicon NPN Power Transistors
2SD2459 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SD2461 ,Transistor Silicon NPN Triple Diffused Type Power Amplifier ApplicationsApplications Unit: mm High DC current gain: h = 800 to 3200 (V = 5 V, I = 0.1 A) FE (1) CE C ..
2SD2474 ,Silicon PNP epitaxial planer type(For low-frequency amplification)Absolute Maximum Ratings (Ta=25˚C)n 3.0– 0.15321Parameter Symbol Ratings UnitCollector to base vol ..
2SD2480 ,Transistor Silicon NPN Epitaxial Type (Darlington power transistor) Micro Motor Drive, Hammer Drive, Switching and Power Amplifier ApplicationsApplications High DC current gain: h = 2000 (min) (V = 2 V, I = 1 A) FE CE C Low saturation ..
2SC1841
