2SC1815 ,Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier ApplicationsApplications Unit: mmDriver Stage Amplifier
2SC1815-GR , NPN Silicon Epitaxial Transistor
2SC1815-GR , NPN Silicon Epitaxial Transistor
2SC1815LT1 , SOT-23 Plastic-Encapsulate Transistors (NPN)
2SC1815LT1 , SOT-23 Plastic-Encapsulate Transistors (NPN)
2SC1815LT1 , SOT-23 Plastic-Encapsulate Transistors (NPN)
2SD2402 ,NPN epitaxial type silicon transistorDATA SHEETSILICON TRANSISTOR2SD2402NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER ..
2SD2403 ,NPN epitaxial type silicon transistorDATA SHEETSILICON TRANSISTOR2SD2403NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER ..
2SD2403 ,NPN epitaxial type silicon transistorDATA SHEETSILICON TRANSISTOR2SD2403NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER ..
2SD2413 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SD2420A ,Power DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SD2425 ,Low freq. power amp., medium-speed switching transistorFEATURES• New package with dimensions in between those of smallsignal and power signal package Hig ..
2SC1815
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications
2SC1815 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC1815 Audio Frequency General Purpose Amplifier Applications
Driver Stage Amplifier Applications High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) Excellent hFE linearity : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) Low noise: NF = 1dB (typ.) at f = 1 kHz Complementary to 2SA1015 (O, Y, GR class)
Maximum Ratings (Ta ��� � 25°C)
Electrical Characteristics (Ta ��� � 25°C) VCE � 6 V, IC � 0.1 mA
f � 1 kHz, RG � 10 k�
Unit: mm
Weight: 0.21 g (typ.)
