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2SC1667 TOS|TOSHIBA N/a 1000 Silicon NPN Power Transistors
2SC1667 MATSUSHITA N/a 27 Silicon NPN Power Transistors



2SC1667 , Silicon NPN Power Transistors
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2SC1674 , TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
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2SD2241 ,Silicon NPN Power Transistors TO-220F packageAPPLICATIONS Unit in mmHigh DC Current Gain : hFE=2000 (Min.)Low Saturation Voltage : VCE (sat)=1-5 ..
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