Partno |
Mfg |
Dc |
Qty |
Available | Descript |
2SC1627A-O |
Toshiba|TOSHIBA |
N/a |
5000 |
|
|
2SC1653 ,DISPLAY TUBE DRIVE ,HIGH VOLTAGE SWITCHING NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 "c)
CHARACTERISTIC SYMBOL . _ . . TEST CONDITIONS
Collector ..
2SC1653-T1B ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta = 25 "c)
CHARACTERISTIC SYMBOL . _ . . TEST CONDITIONS
Collector ..
2SC1654 ,DISPLAY TUBE DRIVE ,HIGH VOLTAGE SWITCHING NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDNEC SILICON TRANSISTORS
'ELECTRONDEVICE 2SC'1653,2SC1l6tidll,
DISPLAY TUBE DRIVE,HIGH VOLTAGE S ..
2SC1654 ,DISPLAY TUBE DRIVE ,HIGH VOLTAGE SWITCHING NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDFEATURES
PACKAGE DIMENSIONS o High Voltage l/CEO : 2SC1653 130 v, 2SC1654 160 v
in millimeter ..
2SC1654 ,DISPLAY TUBE DRIVE ,HIGH VOLTAGE SWITCHING NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 "c)
CHARACTERISTIC SYMBOL . _ . . TEST CONDITIONS
Collector ..
2SD2216J ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SD2217 ,NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHINGDATA SHEETDARLINGTON POWER TRANSISTOR2SD2217NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CO ..
2SD2222 ,Power DevicePower Transistors2SD2222Silicon NPN triple diffusion planar type darlingtonUnit: mmFor power amplif ..