2SC1622A-T1B ,Low-frequency high-gain amplification silicon Tr.ELECTRICAL CHARACTERISTICS (Ta = 25 °C)
'b. CHARACTERISTIC . . . . TEST CONDITIONS
- . , VCB=12 ..
2SC1622A-T2B ,Low-frequency high-gain amplification silicon Tr.SILICON TRANSISTOR
2SC1 622A
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AUDIO /irii:"iiii" ..
2SC1623 ,AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDDATA SHEETSILICON TRANSISTOR2SC1623AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIERNPN SILICON EPI ..
2SC1623 L6 , NPN Silicon Epitaxial Transistors
2SC1623 L6 , NPN Silicon Epitaxial Transistors
2SC1623 L6 , NPN Silicon Epitaxial Transistors
2SD2155 ,Silicon NPN Power Transistors TO-3PL packageELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SD2155 ,Silicon NPN Power Transistors TO-3PL packageapplications (computer, personal equipment, office equipment, measuring equipment, industrialroboti ..
2SD2159 , 1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE
2SD2161 ,Silicon power transistorDATA SHEETSILICON POWER TRANSISTOR2SD2161NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNE ..
2SD2162 ,Silicon power transistorDATA SHEETSILICON POWER TRANSISTOR2SD2162NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNE ..
2SD2164 ,Silicon power transistorDATA SHEETSILICON POWER TRANSISTOR2SD2164NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY ..
2SC1622A-L-2SC1622A-T1B-2SC1622A-T2B
