2SC1621 ,HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta 1r= 25 oC)
CHARACTERISTIC SYMBOL . . TEST CONDITIONS
' Collector ..
2SC1621-T1B ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta 1r= 25 oC)
CHARACTERISTIC SYMBOL . . TEST CONDITIONS
' Collector ..
2SC1622 ,AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDSILICON TRANSISTOR
2SC1 622A
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AUDIO /irii:"iiii" ..
2SC1622 ,AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 °C)
'b. CHARACTERISTIC . . . . TEST CONDITIONS
- . , VCB=12 ..
2SC1622A ,AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDSILICON TRANSISTOR
2SC1 622A
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AUDIO /irii:"iiii" ..
2SC1622A-L ,Low-frequency high-gain amplification silicon Tr.SILICON TRANSISTOR
2SC1 622A
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AUDIO /irii:"iiii" ..
2SD2150T100R , Low Frequency Transistor (20V, 3A)
2SD2150T100R , Low Frequency Transistor (20V, 3A)
2SD2150T100S , Low Frequency Transistor (20V, 3A)
2SD2155 ,Silicon NPN Power Transistors TO-3PL packageELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SD2155 ,Silicon NPN Power Transistors TO-3PL packageapplications (computer, personal equipment, office equipment, measuring equipment, industrialroboti ..
2SD2159 , 1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE
2SC1621
