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2SC1304 N/a 86



2SC1317 ,Small-signal deviceFeatures• Low collector-emitter saturation voltage VCE(sat)0.7±0.1• Complementary pair with 2SA0719 ..
2SC1318 ,Small-signal deviceTransistors2SC1317, 2SC1318Silicon NPN epitaxial planar typeUnit: mmFor low-frequency power amplifi ..
2SC1360 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max Unit2SC1360 V I ..
2SC1360A ,Small-signal deviceapplications (such as for airplanes, aerospace, automobiles, traffic control equipment,combustion e ..
2SC1383 ,Small-signal deviceTransistors2SC1383, 2SC1384Silicon NPN epitaxial planar typeUnit: mm5.9±0.2 4.9±0.2For low-frequenc ..
2SD2052 ,Silicon NPN triple diffusion planar type(For high power amplification)Absolute Maximum Ratings (T =25˚C)nC 10.9– 0.5Parameter Symbol Ratings Unit1 2 3Collector to base ..
2SD2059 , Silicon NPN Power Transistors
2SD2059 , Silicon NPN Power Transistors
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