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2SC1173KN/a10avaiSilicon NPN Power Transistors TO-220 package


2SC1173 ,Silicon NPN Power Transistors TO-220 packageApplications.MAXIMUM RATINGSCollector-Base Voltage'SILICON NPN EPITAXIAL TYPE (PCT PROCESS)CHARACTE ..
2SC1175 , Medium Power Amplifiers and Switches
2SC1213 , TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
2SC1213 , TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
2SC1213A , NPN Silicon General Purpose Transistor
2SC1213A , NPN Silicon General Purpose Transistor
2SD1994 ,TransistorFeatures010w collector-emitter saturation voltage VCEM)°2—3W output can be obtained in a complement ..
2SD1996 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SD1998 ,NPN Epitaxial Planar Silicon Transistors Compact Motor Driver Applications
2SD1999 ,NPN Epitaxial Planar Silicon Transistors Compact Motor Driver Applications
2SD200 , NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR(COLOR TV HORIZONTAL OUTPUT APPLICATIONS)
2SD2000 ,Power DeviceAbsolute Maximum Ratings T = 25°C 0.8±0.1CParameter Symbol Rating Unit2.54±0.3Collector-base volta ..


2SC1173
Silicon NPN Power Transistors TO-220 package
TOSHIBA 4H)ISCRETE/0pT0y
9097250 TOSHIBA tDIscfRETEtOF'TO)
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
St, DEDHU‘TEED nnmuun 5 Ir
56C 07359
Dr- 33~‘?'7
- 2SCI 1 73
Unit in mm
POHER AMPLIFIER APPLICATIONS. 10.GMAX. gfstsho.a
CAR RADIO, CAR STEREO OUTPUT STAGE AMPLIFIER 5i? _§L j-
APPLICATIONS. t g I
FEATURES.. ti I',): i
. Good Linearity of hFE. (O i sei _
Complementary to 2SA473 and 5 Hates Output ttS i E
Applications. f)
MAXIMUM RATINGS 254 "ii'-
CHARACTERISTIC SYMBOL RATING UNIT N o. t.
Collector-Base Voltage . VC130 30 V 2 Ic-f vei)
Collector-Emitter Voltage VCEO 30 V P - _ i 'fl
Emitter-Base Voltage VEBO ll 1. BASE
Collector Current IC A a COLLECTOR (HEAT SINK)
Emitter Current IE -3 A ' EMITTER
Collector Power Dissipa- Pc 10 w JEDEC TO-ZZOAB
tion (Tc=25°c) EIAJ’ SW-io
Junction Temperature Td 150 "c TOSHIBA 2-10AIA
Storage Temperature Range Tstg -55 N 150 "c Mounting kit No. A075
Height '. 1.9g
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current IcBO VCB=20V, IE=0 - - 1.0 "
Emitter Cut-off Current IEBO VEB=5V, Ic=0 - - 1.0 M
§:::::::::'5:::::: vmm IC=10mA, IB.---0 30 - - v
21,11ta1',',-da'l/,'1eag,, “mm Ar--amA, Itya0 s - - v
hFE(1) VCE=2V. IC=0.5A 7o - 240
DC Current Gain (Note)
hFE(2) VCE=2V, Ic=2.5A 25 - -
323:2:223‘33522; chsao 1cchs, lvso.2A - 0.3 0.8 v
Base-Emitter Voltage VBE VCE---2V, I(;=0.5A - 0.75 1.0 V
Transition Frequency fi 1lay=2V, IC=O.SA - 100 - MHz
Collector Output Capacitance Cob VcB=10V,IE=O,f=lMHz - "35 - pF
Note: hFE(l) Classification o , 70 N 140, Y t 120 N 240
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This Material Copyrighted By Its Respective Manufacturer
TOSHIBA II)ISCRETE/0PT01
Sl, DED‘ID‘WESU UUEIWILI]. 7 ff
9097250 TOSHIBA (DISCRETE/OPTO) 50C 074.41 uT-33~D'l
Io - VBE
',i', GD J?
C9 tf. a0 , .
M m TG=756
3 1.0 g
o 0 .:I
0 L6 32 43 til o o
C0LLECr0R-ElMITTWt VOLTAGE VCE (V) o aa tu 0.6 08 1.0 12 14 1.6
hFE - Its BASE-EMITTER VOLTAGE vBE (v)
c; T Pts - Ta
E. M 100 co Tts--- Ta
2 m -B5 INFINITE HEAT
ir'' 50 SINK
© 100x100x2mmAe
3 ISO fPllri% HEAT SINK
OE'" " @ 50x50x2mmAe
8 10 HEAT SINK
0.005 (101 thas 0.1 0.5 1 B
COLLECTOR CURRENT 10 (N
VcE (sa t) - I c
:3 COMMON
99 A 05 EM ITTER
Ho V 03 10/13: TO
il'' A o BO IO 60 80 100 120 140 160
é: 't AMBIENT TEMPERATURE 'ra (q
OH e Q1
gt; M SAFE OPERATING AREA
:1): J' 005 -25 10
25 " I MAX _ XFSINGLE
g: 3 l tl (PdLSEDX): t NONREPETITIVE
om am l I r l l ‘\PULSE Tg=35'C
0.003 001 0.03 0.1 0.3 0.5 1 T o I MAX l l
COLLECTOR CURRENT 10 (A) ” ECONTINUOUS) AI
100 TO-VBS (LOW CURRENT REGION) a Il 05 l
COMMON g Ri', o 2
a EMITTER m 't; a .. w
= _ a: ' ". lt' ,-.
M 80 VCE= BV = 1 ’0 . .
ttt 2 ati o 2-4’\\ ', 'A
g " If t, ‘Y s'
< 60 I2:
o 5 g 0.5 I ll 06‘ V
g 0 40 g - cuavns MUST BE \ .
g'" 3 twr- DERATED LINEARLY g
a o _WITH INCREASE IN N
ao o 0
A TEMPERATURE a
C9 o l I l I I I I II ",
0 aa at Q6 us ID 12 1.4 1 T 5 10 GO 50 100
BAEE'EMITTER VOLTAGE VBE W) OOLLECTOR-EMITTER VOLTAGE
_ Vow, M
TOSHIBA CORPORATION IlllIIlllllllllllllllllllllllIllillIllllllllllIIIHIIIHHIIIIHIIIlll“IIllllIHIXIHH||Illulllllll|IHlllIllll||H"IllllIlIlllllHIlllllllllllllllllllllllllllllHIIllllllllllllllllllllllllllllllIIIIHIIIIIIIHHIIII
This Material Copyrighted By Its Respective Manufacturer

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