| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC108A |
TOS|TOSHIBA |
N/a |
1000 |
 |
SILICON NPN EPITAXIAL TYPE(PCT PROCESS) |
2SC1090 NEC
2SC1090 NEC
2SC1093 NEC
2SC1093 NCE
2SC108A , SILICON NPN EPITAXIAL TYPE(PCT PROCESS)
2SC1096 ,NPN silicon transistor for audio frequency and low speed switching applications2SA63V2SC1096
ZSA634/ 2SC1096
PNP/NPN a:e'ftiivrry y :1 y 55732157/
PNP/NPN SILICON EPITAXIA ..
2SC1096 ,NPN silicon transistor for audio frequency and low speed switching applications2SA63V2SC1096
ZSA634/ 2SC1096
PNP/NPN a:e'ftiivrry y :1 y 55732157/
PNP/NPN SILICON EPITAXIA ..
2SC1173 ,Silicon NPN Power Transistors TO-220 packageApplications.MAXIMUM RATINGSCollector-Base Voltage'SILICON NPN EPITAXIAL TYPE (PCT PROCESS)CHARACTE ..
2SC1175 , Medium Power Amplifiers and Switches
2SD1979 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SD1979 ,Small-signal deviceAbsolute Maximum Ratings T = 25°Ca1: BaseParameter Symbol Rating Unit2: EmitterCollector-base volt ..
2SD1980 , Power Transistor (100V , 2A)
