2SB953A ,Power DeviceAbsolute Maximum Ratings T = 25°CCParameter Symbol Rating Unit1.3±0.21.4±0.12SB0953 V −40 VCollect ..
2SB954 ,Silicon PNP epitaxial planar type(For power amplification)Absolute Maximum Ratings (T =25˚C)nCParameter Symbol Ratings UnitCollector to 2SB954 –601.3– 0.21. ..
2SB956 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SB962 ,Silicon transistorapplications. _
1. Base -
ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C) T 'foll.ector
Collector to Bas ..
2SB962-Z ,PNP SILICON EPITAXIAL TRANSISTOR MP-3applications. _
1. Base -
ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C) T 'foll.ector
Collector to Bas ..
2SB963 ,Darlington transistorapplications.
if
E
co.
«v
tD.
o
ls:
_.\
2. Collector
ABSOLUTE MAXIMUM RATINGS (Ta = ..
2SD1898-R , NPN Silicon Power Transistors
2SD1898T100Q , Sample Program (Remote Control Transmission/Reception)
2SD1898T100R , Power Transistor (80V, 1A)
2SD1899 ,Silicon power transistorFEATURES
q High hFE hFE= 100 to 400
0 Low VCE(sat) VCE(sat) Tr. 0.3 V
QUALITY GRADE
Standar ..
2SD1899 ,Silicon power transistorapplications.
l.' Base
2. Collector
T . -‘ _ . 3, Emitter
ABSOLUTE _MAXlMUNrRATINGS (Ta IT. ..
2SD1899 ,Silicon power transistorELECTRICAL CHARACTERISTICS (Ta = 25 °C)
__---m
—---n-
_-_m--n
DC Current Gain hFE3* 1__ ..
2SB953A
