| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SB649 |
HITACHI |
N/a |
600 |
 |
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 2SB649 |
HIT |
N/a |
5000 |
|
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
2SB649#T REN
2SB649A REN, Collector-Emitter Voltage :-160V Collector Current :-1.5A
2SB649A RENESAS, Collector-Emitter Voltage :-160V Collector Current :-1.5A
2SB649A HIT, Collector-Emitter Voltage :-160V Collector Current :-1.5A
2SB649A 日立, Collector-Emitter Voltage :-160V Collector Current :-1.5A
2SB649A HITACHI, Collector-Emitter Voltage :-160V Collector Current :-1.5A
2SB649A#T REN
2SB649A. HIT, Collector-Emitter Voltage :-160V Collector Current :-1.5A
2SB649A/2SD669A HITACHI
2SB649AC PMC
2SB649AC HIT
2SB649AC 长电
2SB649C KEXIN
2SB649C(649C) KEXIN
2SB650 HITACHI
2SB663D SANYO
2SB668 TOS, Silicon PNP Power Transistors
2SB649 , BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
2SB668 , Silicon PNP Power Transistors
2SB673 , isc Silicon PNP Darlington Power Transistor
2SB673 , isc Silicon PNP Darlington Power Transistor
2SB673. , isc Silicon PNP Darlington Power Transistor
2SD1632 ,Horizontal Deflection OutputFeatures. Damper diode built-inq High breakdown voltage and high reliability by glass passivationq ..
2SD1632 ,Horizontal Deflection OutputAbsolute Maximum Ratings (Tc=25°C) s! 2.0k0.1 IItem Symbol Value Unit H 1 1:0. 38",” lCollector-bas ..
2SD1633 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max Unit2*Collector- ..
