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2SB605N/a1000avaiPNP SILICON TRANSISTOR
2SB605NECN/a508avaiPNP SILICON TRANSISTOR


2SB605 ,PNP SILICON TRANSISTORFEATURES . High Total Power Dissipation and High Breakdown Voltage: (37293331 (0103,) 1.0 w at 25 ..
2SB605 ,PNP SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta TT. 25 ''C) CHARACTERISTIC, . MAX. TEST CONDITIONS DC Current Ga ..
2SB621 ,750mW NPN silicon transistorAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating Unit2SB0621 V −30 VCollector-base voltag ..
2SB624 ,AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLDSILICON TRANSISTOR 253624 AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR ..
2SB624-T1B ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta=25 oC) VCBO - 30 V VCEO -- 25 v VEBO - 5.0 V IC - 700 mA PT 2 ..
2SB624-T2B ,Silicon transistorSILICON TRANSISTOR 253624 AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR ..
2SD1623 ,NPN Epitaxial Planar Silicon Transistors High-Current Switching ApplicationsFeatures4.51.5•1.6Adoption of FBET, MBIT processes.•Low collector-to-emitter saturation voltage.•La ..
2SD1623 ,NPN Epitaxial Planar Silicon Transistors High-Current Switching ApplicationsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltag ..
2SD1623S-TD-E , High-Current Switching Applications
2SD1624 ,NPN Epitaxial Planar Silicon Transistors High Current Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SD1624 ,NPN Epitaxial Planar Silicon Transistors High Current Switching ApplicationsFeatures · Adoption of FBET, MBIT processes. · Low collector-to-emitter saturation voltage. · Fast ..
2SD1624 ,NPN Epitaxial Planar Silicon Transistors High Current Switching ApplicationsOrdering number:2019APNP/NPN Epitaxial Planar Silicon Transistors2SB1124/2SD1624High Current Switch ..


2SB605

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