| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SB598-F |
SANYO|SANYO |
N/a |
10200 |
 |
|
2SB601 ,Silicon transistorDATA SHEETSILICON POWER TRANSISTOR2SB601PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNEC ..
2SB601. ,Silicon transistorDATA SHEETSILICON POWER TRANSISTOR2SB601PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNEC ..
2SB605 ,PNP SILICON TRANSISTORFEATURES . High Total Power Dissipation and High Breakdown Voltage: (37293331 (0103,)
1.0 w at 25 ..
2SB605 ,PNP SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta TT. 25 ''C)
CHARACTERISTIC, . MAX. TEST CONDITIONS
DC Current Ga ..
2SB621 ,750mW NPN silicon transistorAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating Unit2SB0621 V −30 VCollector-base voltag ..
2SD1622 ,Low-Frequency Power Amp ApplicationsAbsolute Maximum Ratings at Ta=25°C T unitCollector to Base Voltage VCBO (-)60 VCollector to Emitte ..
2SD1623 ,NPN Epitaxial Planar Silicon Transistors High-Current Switching ApplicationsFeatures4.51.5•1.6Adoption of FBET, MBIT processes.•Low collector-to-emitter saturation voltage.•La ..
2SD1623 ,NPN Epitaxial Planar Silicon Transistors High-Current Switching ApplicationsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltag ..
