| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SB566A |
HITACHI |
N/a |
135 |
 |
Silicon PNP Power Transistors |
| 2SB566A |
HIT |
N/a |
20 |
|
Silicon PNP Power Transistors |
2SB568 HIT
2SB56-PAIR TOSHIBA.
2SB5706-T-TL-E SANYO
2SB595 TOS, LOW FREQUENCY POWER AMPLIFIER(PNP EPITAXUAL)
2SB595-Y TOSHIBA
2SB596 SAMSUNG, PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)
2SB596 MOSPEC, PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)
2SB596 TOS, PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)
2SB596 TOSHIBA, PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)
2SB596. TOS, PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)
2SB596-Y TOSHIBA
2SB566A , Silicon PNP Power Transistors
2SB598 ,FOR AUDIO FREQUENCY POWER AMP, CONVERTERS, ELECTRONIC GOVERNORS
2SB601 ,Silicon transistorDATA SHEETSILICON POWER TRANSISTOR2SB601PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNEC ..
2SB601. ,Silicon transistorDATA SHEETSILICON POWER TRANSISTOR2SB601PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNEC ..
2SB605 ,PNP SILICON TRANSISTORFEATURES . High Total Power Dissipation and High Breakdown Voltage: (37293331 (0103,)
1.0 w at 25 ..
2SD1620 ,NPN Epitaxial Planar Silicon Transistor 1.5V, 3V Strobe ApplicationsFeatures Package Dimensions · Less power dissipation because of low V ,CE(sat) unit:mmpermitting mo ..
2SD1622 ,Low-Frequency Power Amp ApplicationsAbsolute Maximum Ratings at Ta=25°C T unitCollector to Base Voltage VCBO (-)60 VCollector to Emitte ..
2SD1623 ,NPN Epitaxial Planar Silicon Transistors High-Current Switching ApplicationsFeatures4.51.5•1.6Adoption of FBET, MBIT processes.•Low collector-to-emitter saturation voltage.•La ..
