2SB544 ,Low-Frequency Power Amp / Electronic Governor Applications
2SB546 , Silicon PNP Power Transistors
2SB546 , Silicon PNP Power Transistors
2SB546A ,POWER TRANSISTORSssucow POWER TRANSists
zsaswkmm/zsmmmmzA
VERTICAL DEFLECTION OUTPUT FOR COLOR TV
PNP/NPN SILIC ..
2SB546A ,POWER TRANSISTORSssucow POWER TRANSists
zsaswkmm/zsmmmmzA
VERTICAL DEFLECTION OUTPUT FOR COLOR TV
PNP/NPN SILIC ..
2SB548 ,PNP/NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERSDATA SHEETSILICON POWER TRANSISTOR2SB548, 549/2SD414, 415PNP/NPN SILICON EPITAXIAL TRANSISTOR ..
2SD1614-T1 ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta = 25 0C)
CHARACTERISTIC . SYMBOL IMIN.
Collector Cutoff Current IC ..
2SD1614-T2 ,Silicon transistorFEATURES
''AcKt.elu?eey"oNs . World Standard Miniature Package
m ml imeters 0 High DC Current G ..
2SD1615 ,NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLDFEATURESPACKAGE DIMENSIONS• World Standard Miniature Packagein millimeters• Low VCE (sat) VCE(sat ..
2SD1615 ,NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLDDATA SHEETSILICON TRANSISTORS2SD1615, 2SD1615ANPN SILICON EPITAXIAL TRANSISTORSPOWER MINI MOLDDES ..
2SD1615A ,NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLDELECTRICAL CHARACTERISTICS (TA = 25 ˚C)CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONSCol ..
2SD1615A ,NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLDELECTRICAL CHARACTERISTICS (TA = 25 ˚C)CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONSCol ..
2SB544
