2SB1645 ,Silicon PNP triple diffusion planar type Darlington(For power amplification)Absolute Maximum Ratings T = 25°CC 0.7±0.1Parameter Symbol Rating Unit5.45±0.310.9±0.5Collector to ..
2SB1655 , Silicon PNP Power Transistors
2SB1655 , Silicon PNP Power Transistors
2SB1655. , Silicon PNP Power Transistors
2SB1658 ,AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTORSFEATURESPACKAGE DIMENSIONS• Low VCE(sat)in millimeters (inches)VCE(sat) = - 0.15 V Max (@lC/lB = 1. ..
2SB1667 ,TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS)TOSHIBA 2SB1667(SM)2531667(SM)AUDIO FREQUENCY POWER AMPLIFIER
2SD1472 , Silicon NPN Epitaxial, Darlington
2SD1472 , Silicon NPN Epitaxial, Darlington
2SD1474 ,Power DeviceAbsolute Maximum Ratings T = 25°C 1.3±0.2C1.4±0.1Parameter Symbol Rating Unit+0.20.5–0.10.8±0.1Col ..
2SD1480 ,Silicon NPN triple diffusion planar type(For power amplification)Absolute Maximum Ratings (T =25˚C)n C– +0.20.5 –0.10.8– 0.1Parameter Symbol Ratings UnitCollector ..
2SD1481 ,Silicon transistorDATA SHEETSILICON POWER TRANSISTOR2SD1481NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNE ..
2SD1483 ,Transistorapplications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion ..
2SB1645
