| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SB1427T100E |
ROHM |
N/a |
16000 |
 |
Power transistor (−20V, −2A) |
| 2SB1427T100E |
翻新ROHM |
N/a |
6000 |
|
Power transistor (−20V, −2A) |
2SB1427T100R ROHM
2SB1427T100U ROHM
2SB1427T100E , Power transistor (−20V, −2A)
2SB1429 ,Silicon PNP Power Transistors TO-3PL packageAbsolute Maximum Ratings (Ta = 25°C) 3CHARACTERISTIC SYMBOL RATING UNITCollector-Base Voltage VCBO ..
2SB1429 ,Silicon PNP Power Transistors TO-3PL packageElectrical Characteristics (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNITColle ..
2SB1430 ,Silicon power transistorDATA SHEETSILICON POWER TRANSISTOR2SB1430PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNE ..
2SB1432 ,Silicon power transistorDATA SHEETSILICON POWER TRANSISTOR2SB1432PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNE ..
2SD1306NDTL-E , Silicon NPN Epitaxial
2SD1308 , NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER AND LOW SPEED SWITCHING INDUSTRIAL USE
2SD1312 ,NPN SILICON TRANSISTORFEATURES . 0 High total power dissipation and high breakdown voltage: (0293113.)
1.0 W at 25 °C am ..
