2SB1413 ,TransistorAbsolute Maximum Ratings (Ta=25°C)2531413I Package Dimensions75:02 'F—iUnit 2 mm45:0210.810205$90'. ..
2SB1414 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SB1416 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SB1417 ,Silicon PNP epitaxial planar type(For power amplification)Absolute Maximum Ratings (T =25˚C)n C ––Parameter Symbol Ratings Unit1.2– 0.1C1.0Collector to 2SB1 ..
2SB1424 T100R , Low VCE(sat) Transistor (−20V, −3A)
2SB1424 T100R , Low VCE(sat) Transistor (−20V, −3A)
2SD1273 ,Silicon NPN triple diffusion planar typePower Transistors2SD1273, 2SD1273ASilicon NPN triple diffusion planar typeFor power amplification w ..
2SD1273 ,Silicon NPN triple diffusion planar typeFeaturesn–l High foward current transfer ratio hFE –f 3.1– 0.1l Satisfactory linearity of foward cu ..
2SD1273. ,Silicon NPN triple diffusion planar typeAbsolute Maximum Ratings (T =25˚C)nC– +0.20.5 –0.1Parameter Symbol Ratings Unit0.8– 0.1Collector t ..
2SD1274 ,Silicon NPN triple diffusion planar type(For power amplification)Absolute Maximum Ratings (T =25˚C)n C1.3– 0.2Parameter Symbol Ratings Unit 1.4– 0.12SD1274 150– +0 ..
2SD1274B ,Silicon NPN triple diffusion planar type(For power amplification)Features10.0– 0.2 4.2– 0.2n–5.5– 0.2 2.7– 0.2l High collector to base voltage VCBOl High-speed swit ..
2SD1275 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max Unit2SD1275 V I ..
2SB1413
