| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SB1412QF5 |
ROHM |
N/a |
1063 |
 |
|
2SB1413 ,TransistorAbsolute Maximum Ratings (Ta=25°C)2531413I Package Dimensions75:02 'F—iUnit 2 mm45:0210.810205$90'. ..
2SB1414 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SB1416 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SB1417 ,Silicon PNP epitaxial planar type(For power amplification)Absolute Maximum Ratings (T =25˚C)n C ––Parameter Symbol Ratings Unit1.2– 0.1C1.0Collector to 2SB1 ..
2SB1424 T100R , Low VCE(sat) Transistor (−20V, −3A)
2SD1271A ,Power DevicePower Transistors2SD1271ASilicon NPN epitaxial planar typeFor power switchingUnit: mm10.0±0.2 4.2±0 ..
2SD1271A ,Power DeviceFeatures• Low collector-emitter saturation voltage VCE(sat)φ 3.1±0.1• Satisfactory linearity of for ..
2SD1272 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-e ..
