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2SB1381TOSHIBAN/a1000avaiSilicon PNP Power Transistors TO-220F package


2SB1381 ,Silicon PNP Power Transistors TO-220F packageAPPLICATIONS1010.3¢3.2:0.22.7i0.20 High DC Current Gain : hFE=1500(Min.)(VCE = -3V, IC = -2.5A)0 Lo ..
2SB1382 , Silicon PNP Epitaxial Planar Transistor(Chopper Regulator, DC Motor Driver and General Purpose)
2SB1386 T100Q , Low frequency transistor (−20V,−5A)
2SB1386T100Q , Low frequency transistor (−20V,−5A)
2SB1389 , Silicon PNP Power Transistors
2SB1390 , Silicon PNP Power Transistors
2SD1245 ,SI NPN TRIPLE DIFFUSED PLANAR DARLINGTONFeaturesq ifaiyrtlifiytiltg+ hr.,.. grri','ivto/''High her;O cy V , f . "4.-- 15E]; vcnu hriis-tirx ..
2SD1246 ,High-current SwitchingAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SD1247 ,NPN Epitaxial Planar Silicon Transistors Large-Current Driving ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SD1250 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitV I = 500 µA ..
2SD1250 ,Power DeviceAbsolute Maximum Ratings T = 25°CCParameter Symbol Rating Unit(6.5)Collector-base voltage (Emitter ..
2SD1251 ,Silicon NPN triple diffusion junction type(For power amplification)Absolute Maximum Ratings (T =25˚C)n C2.54– 0.35.08– 0.5Parameter Symbol Ratings Unit 1:Base13 22:C ..


2SB1381
Silicon PNP Power Transistors TO-220F package
TOSHIBA 2581381
TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE
ZSI1381
HIGH POWER SWITCHING APPLICATIONS
HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS
0 High DC Current Gain : hFE=1500(Min.)
(VCE = -3V, 10 = -2.5A)
0 Low Saturation Voltage: VCE (sat)" -1.5V(Max.) (IQ: -2.5A)
0 Complementary to 2SD2079.
0.75:0.15
MAXIMUM RATINGS (Tc=25°C) 2. i .2 2.54t0.25
CHARACTERISTIC SYMBOL RATING UNIT 'd-l 1 2 3 _?i N
+|:_ - 3
Collector-Base Voltage VCBO - 100 V iti,r-EEEni,'i.
Collector-Emitter Voltage VCEO -100 V 1 BASE
Emitter-Base Voltage VEBO -7 V i.' COLLECTOR
DC - 5 3. EMITTER
Collector Current I A
Pulse C -8 JEDEC -
Base Current IE -0.5 A JEITA SC-67
Collector Power Ta=25°C P 2.0 W TOSHIBA 2-10RIA
Dissipation Tc=25°C C 30 Weight : 1.7g (Typ.)
J unction Temperature Tj 150 "C
Storage Temperature Range Tstg -55-150 °C
EQUIVALENT CIRCUIT
COLLECTOR
1 2001-10-29
TOSHIBA 2531381
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = - 100V, IE =0 - - - 100 pA
Emitter Cut-off Current IEBO VEB = - 6V, IC = 0 - - - 2.5 mA
Collector-Emir
Breakdown Voltage V (BR) CEO IC - -30mA, 1B - 0 - 100 - - V
h V ---3V, I ---2.5A 1 00 - 1 0
DC Current Gain FE (1) CE C 5 500
hFE (2) VCE = -3V, IC = - 7A 500 - -
Collector-Emitter VCE (sat) (1) IC = - 2.5A, IB = - 5mA - - 1.1 - 1.5 V
Saturation Voltage VCE (sat) (2) IC = -5A, IB = -20mA - - 1.6 -3.0
Base-Emitter
Saturation Voltage VBE (sat) IC - - 2.5A, IB - - 5mA - - 1.8 - 2.5 V
Turn-on Time ton IB2 L32 f' - - - - - -W,T'S7 - 0.8 -
Switching IBI INPUT "rc-p',, E
. H BI l - - -
Time Storage Time tstg 20ps 2.5 ,us
. -IBI =IB2 =5mA VCC"-. -25V
Fall Time tf DUTY CYCLES 1% - 2.0 -
2 2001 -1 0-29
TOSHIBA
10 (A)
COLLECTOR CURRENT
DC CURRENT GAIN hpE
BASE-EMITTER SATURATION
VOLTAGE VBE(sat) (V)
IC - VCE
-15 COMMON
- ' .. EMITTER
Te=25''C
0 - 2 - 4 - 6 - 8 - 10
C0LLECT0R-EMITTER VOLTAGE VCE (V)
hFE - 10
COMMON
EMITTER
5000 To = 100°C VCE = - 3V
-0.05 -0.1 -0.3 -0.5 -1
COLLECTOR CURRENT 10 (A)
-3 -5 -10 -30
VBE(sat) - IC
COMMON EMITTER
IC/IB=250
'2"0.1 -0.3 -0.5 -1 -3 -5 -10
COLLECTOR CURRENT 1C (A)
10 (A)
COLLECTOR CURRENT
COLLECTOR—EMITTER SATURATION
VOLTAGE VCE(sat) (V)
COLLECTOR-EMITTER VOLTAGE VCE
IC - VBE
COMMON EMITTER
VCE = - 3V "
Tc=100°C 25 -55
0 -0.8 -1.6 -2.4 -3.2 -4.0
BASE-EMITTER VOLTAGE VBE (V)
VCE(sat) - IC
COMMON EMITTER
IC/IB =250
Tc = - 55°C
-0.5 25
-0.1 -0.3 -0.5 -1 -3 -5 -10
COLLECTOR CURRENT 10 (A)
VCE - IB
COMMON
EMITTER
To = 25°C
IC---0.1A
- 100 -300
-0.1 -0.3 -1 -3 -10 -30
BASE CURRENT IB (mA)
2001 -1 0-29
TOSHIBA
co Tc=Ta
INFINITE HEAT SINK
S NO HEAT SINK
COLLECTOR POWER DISSIPATION
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE Ta (°C)
SAFE OPERATING AREA
-20 1 1 HHHI
-10:IC MAX.(PULSED) lk.
-5 100 pzsis.(. -
IC MAX. N, .w.
A -3 (CONTINUOUS) " IrnsX.
s I 1 1 I t " 10ms)k
DC OPERATION / "
S? Tc=25°C "s, V 1
B -1 h t
DD: -0.5 l
g: -0.3 l l
o -0.1
o 05 X SINGLE NONREPETITIVE l
- . PULSE Tc=25°C
-0.03 CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE.
0 01 VCEO MAX.
_ . -1 -3 -5 -10 -30 -50 -100 -300
C0LLECT0RaMITTER VOLTAGE VCE (V)
TRANSIENT THERMAL RESISTANCE
Rthm (°C/W)
Rth (t) - tw
l) Ta=25°C NO HEAT SINK
Q) Tc=25°C INFINITE HEAT SINK
10-3 10-2 IO-l 100 101 102
PULSE WIDTH tw (s)
2001 -1 0-29
TOSHIBA 2581381
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
5 2001-10-29
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