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2SB1370-F ROHM N/a 24700



2SB1371 ,Power DeviceFeaturesφ 3.2±0.1• Excellent collector current I characteristics of forward currentCtransfer ratio ..
2SB1374 , 1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE
2SB1375 ,Silicon PNP Power Transistors TO-220F packageELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SB1375. ,Silicon PNP Power Transistors TO-220F package2531375AUDIO FREQUENCY POWER AMPLIFIER Unit in mm10+03 ¢32+02 2.710%O T.nw Qatnrntinn antnc‘n . Vnm ..
2SB1381 ,Silicon PNP Power Transistors TO-220F packageAPPLICATIONS1010.3¢3.2:0.22.7i0.20 High DC Current Gain : hFE=1500(Min.)(VCE = -3V, IC = -2.5A)0 Lo ..
2SD1223 ,Transistor Silicon NPN Epitaxial Type (PCT process) (darlington) Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier ApplicationsApplications  High DC current gain: h = 2000 (min) (V = 2 V, I = 1 A) FE CE C Low saturation ..
2SD1224 ,Transistor Silicon NPN Epitaxial Type (PCT process) (darlington) Pulse Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier ApplicationsApplications  High DC current gain: h = 4000 (min) (V = 2 V, I = 150 mA) FE CE C Low saturati ..
2SD1229 ,NPN Epitaxial Planar Silicon Darlington Transistors Driver ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
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