2SB1229 ,Bipolar Transistor, 50V, 2A, Low VCE(sat), NPN Single NPMaximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage V 60 VC ..
2SB1229 ,Bipolar Transistor, 50V, 2A, Low VCE(sat), NPN Single NPAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SB1230 ,PNP Epitaxial Planar Silicon Transistor 100V/4A Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SB1234 ,PNP Epitaxial Planar Silicon TransistorsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SB1236 , Power Transistor (-120V , -1.5A)
2SB1237 , Medium Power Transistor (−32V,−1A)
2SD1001 ,NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDFEATURES .
PACKAGE DIMENSIONS . 0 World Standard Miniature Package
in millimeters (inches) : SOT- ..
2SD1001- ,NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDELECTRICAL CHARACTERISTICS (Ta=25 oC)
CHARACTERISTIC SYMBOL TEST CONDITIONS
Collector Cutoff Cu ..
2SD1001-T1 ,Silicon transistorFEATURES .
PACKAGE DIMENSIONS . 0 World Standard Miniature Package
in millimeters (inches) : SOT- ..
2SD1001-T2 ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta=25 oC)
CHARACTERISTIC SYMBOL TEST CONDITIONS
Collector Cutoff Cu ..
2SD1005 ,NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDELECTRICAL CHARACTERISTICS (Ta=25 oC)
CHARACTERISTIC
SYMBOL
TEST CONDITIONS
Collector C ..
2SD1005-T1 ,Silicon transistorFEATURES
0 World Standard Miniature Package
: SOT--89
q High Collector to Base Voltage '
..
2SB1229
Bipolar Transistor, 50V, 2A, Low VCE(sat), NPN Single NP
Applications• Voltage regulators, relay drivers, lamp drivers, electrical equipment
Features • Adoption of FBET, MBIT processes • Large current capacity• Low collector-to-emitter saturation voltage • Fast switching time
Specifi cations
Absolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO 60 V
Collector-to-Emitter Voltage VCEO 50 V
Emitter-to-Base Voltage VEBO 6V
Collector Current IC 2A
Collector Current (Pulse) ICP 3A
Collector Dissipation PC 0.75 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Package Dimensions unit : mm (typ)
7522-002
2SD1835 NPN Epitaxial Planar Silicon Transistor
Driver Applications
Product & Package Information• Package : NP
• JEITA, JEDEC : SC-34A, TO-92, TO-226AA, SOT-54
• Minimum Packing Quantity : 1,500 pcs./box, 500pcs./bag
Marking Electrical Connection
D1835LOT No.
RANK
