2SB1156 ,Power DeviceAbsolute Maximum Ratings T = 25°CCParameter Symbol Rating Unit5.45±0.310.9±0.5Collector-base volta ..
2SB1162 , Silicon PNP Power Transistors
2SB1163 , SI NPN TRIPLE DIFFUSED PLANAR HIGH POWER AMPLIFIER
2SB1165 ,PNP Epitaxial Planar Silicon Transistors 50V/5A Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SB1181 TL Q , Power Transistor (−80V, −1A)
2SB1181TLQ , Power Transistor (−80V, −1A)
2SC5886A , High-Speed Switching Applications
2SC5890 , Silicon NPN Epitaxial UHF / VHF wide band amplifier
2SC5902 ,Silicon NPN triple diffusion mesa typeElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitEmitter-base ..
2SC5902 ,Silicon NPN triple diffusion mesa typeAbsolute Maximum Ratings T = 25°CC 0.7±0.1Parameter Symbol Rating Unit5.45±0.310.9±0.5Collector-ba ..
2SC5904 ,Silicon NPN triple diffusion mesa typeElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC5905 ,Power DevicePower Transistors2SC5905Silicon NPN triple diffusion mesa typeHorizontal deflection output for TV, ..
2SB1156
