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2SB1149NECN/a2000avaiSuitable for use to operate from IC without Predriver, such as hammer driver


2SB1149 ,Suitable for use to operate from IC without Predriver, such as hammer driverDESCRIPTION The 2SB1149 is a darlington transistor built-in dumper diode F EATU R ES at E-C. ..
2SB1151 ,Low Collector Saturation VoltageFEATURES q Low Collector Saturation Voltage. "'ra.Eiar.lm (0.110 MAX.) VCE(sat) = --0.14 V TYP. (@ ..
2SB1151 ,Low Collector Saturation VoltageELECTRICAL CHARACTERISTICS (Ta = 25 °C) SYMBOL VCEI(sat)M VBE(sat)M hFE1** f11:52” hF53** ..
2SB1155 ,Silicon PNP epitaxial planar type(For power switching)Absolute Maximum Ratings (T =25˚C)n C2.0– 0.1–Parameter Symbol Ratings Unit1.1– 0.1 0.6– 0.2Collec ..
2SB1156 ,Power DeviceAbsolute Maximum Ratings T = 25°CCParameter Symbol Rating Unit5.45±0.310.9±0.5Collector-base volta ..
2SB1162 , Silicon PNP Power Transistors
2SC5885 ,Silicon NPN triple diffusion mesa typeAbsolute Maximum Ratings T = 25°CC0.7±0.10.75±0.1Parameter Symbol Rating Unit2.54±0.2Collector-bas ..
2SC5885 ,Silicon NPN triple diffusion mesa typeElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitEmitter-base ..
2SC5886A , High-Speed Switching Applications
2SC5890 , Silicon NPN Epitaxial UHF / VHF wide band amplifier
2SC5902 ,Silicon NPN triple diffusion mesa typeElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitEmitter-base ..
2SC5902 ,Silicon NPN triple diffusion mesa typeAbsolute Maximum Ratings T = 25°CC 0.7±0.1Parameter Symbol Rating Unit5.45±0.310.9±0.5Collector-ba ..


2SB1149

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