| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SB1115A-T1B |
NEC|NEC |
N/a |
2000 |
 |
|
2SB1115-T1 ,Silicon transistorDATA SHEET
SILICON TRANSISTORS
2531 1 1 5,2531 1 1 BA
PNP SILICON EPITAXIAL TRANSISTOR
PO ..
2SB1115-T2 ,Silicon transistorFEATURES
. World Standard MiniaturePackage
. Low VCE(sat). VCE(sat) = -0.2 V at 1 A
O Compleme ..
2SB1116 ,Audio frequency power amplifier medium speed switching. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -6V. Collector dissipation: Pc(max) = 0,75W.DATA SHEETSILICON TRANSISTORS2SB1116, 1116APNP SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY ..
2SB1116A ,Silicon transistorDATA SHEETSILICON TRANSISTORS2SB1116, 1116APNP SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY ..
2SB1117 ,Suitable for driver of solenoid or motor, or electronic flashELECTRICAL CHARACTERISTICS (Ta = 25 °c)
SYMBOL CHARACTERISTIC MIN. TYP. MAX. UNIT TEST CONDITION ..
2SC5682 ,Horizontal Deflection Switching TransistorsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltag ..
2SC5686 ,Silicon NPN triple diffusion mesa typeAbsolute Maximum Ratings T = 25°CC0.7±0.1Parameter Symbol Rating Unit5.45±0.310.9±0.5Collector-bas ..
2SC5686 ,Silicon NPN triple diffusion mesa typeElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
