| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SB1115-YL |
NEC|NEC |
N/a |
358 |
 |
|
2SB1116 ,Audio frequency power amplifier medium speed switching. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -6V. Collector dissipation: Pc(max) = 0,75W.DATA SHEETSILICON TRANSISTORS2SB1116, 1116APNP SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY ..
2SB1116A ,Silicon transistorDATA SHEETSILICON TRANSISTORS2SB1116, 1116APNP SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY ..
2SB1117 ,Suitable for driver of solenoid or motor, or electronic flashELECTRICAL CHARACTERISTICS (Ta = 25 °c)
SYMBOL CHARACTERISTIC MIN. TYP. MAX. UNIT TEST CONDITION ..
2SB1119 ,LF Amplifier, Electronic Governor Applications
2SB1120 ,PNP/NPN Epitaxial Planar Silicon Transistors High-Current Driver ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC5700WB-TR-E , Silicon NPN Epitaxial VHF/UHF wide band amplifier
2SC5703 , Silicon NPN Epitaxial Type High-Speed Switching Applications
2SC5706 ,NPN Epitaxial Planar Silicon Transistors High Current Switching ApplicationsFeatures[2SA2039 / 2SC5706]• Adoption of FBET, MBIT process.6.52.35.0•Large current capacitance.0.5 ..
