| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SB1109 |
HIT |
N/a |
100 |
 |
SILICON PNP EPITAXIAL (LOW FREQUENCY HIGH VOLTAGE AMPLIFIER) |
| 2SB1109 |
日立 |
N/a |
30000 |
|
SILICON PNP EPITAXIAL (LOW FREQUENCY HIGH VOLTAGE AMPLIFIER) |
| 2SB1109 |
HITACHI |
N/a |
49 |
|
SILICON PNP EPITAXIAL (LOW FREQUENCY HIGH VOLTAGE AMPLIFIER) |
2SB1109C HITACHI
2SB1109-C HITACHI
2SB1109 , SILICON PNP EPITAXIAL (LOW FREQUENCY HIGH VOLTAGE AMPLIFIER)
2SB1114 ,Silicon transistorFEATURES
q Wbrld Standard Miniature Pa'ckage
ELECTRICAL tHAR/urrERismci (Ta = 25 °c)
'0 High ..
2SB1114 ,Silicon transistorFEATURES
q Wbrld Standard Miniature Pa'ckage
ELECTRICAL tHAR/urrERismci (Ta = 25 °c)
'0 High ..
2SB1114-T1 ,Silicon transistorollllhlEiiiC
DATA SHEET
SILICON TRANSISTOR
ZSB1114
PNP SILICON EPITAXIAL TRANSISTOR
-. ..
2SB1115 ,PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDFEATURES
. World Standard MiniaturePackage
. Low VCE(sat). VCE(sat) = -0.2 V at 1 A
O Compleme ..
2SC5669 ,NPN Bipolar Transistor for Audio Power Amplifier ApplicationsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltag ..
2SC5682 ,Horizontal Deflection Switching TransistorsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltag ..
2SC5686 ,Silicon NPN triple diffusion mesa typeAbsolute Maximum Ratings T = 25°CC0.7±0.1Parameter Symbol Rating Unit5.45±0.310.9±0.5Collector-bas ..
